High-quality ZnO growth, doping, and polarization effect

Authors:
  • KTKun Tang
    Kun Tang
  • JYJiandong Ye
    Jiandong Ye
  • SZShunming Zhu
    Shunming Zhu
  • RZRong Zhang
    Rong Zhang
  • YZYoudou Zheng
    Youdou Zheng
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Abstract
The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.

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