Effect of Double Junctions in Nano Structure Oxide Materials and Gas Sensitivity

This publication has 14 references indexed in Scilit:

• Effect of co-doping and tri-doping with transition metals and a nonmetal on photocatalytic activity in visible light of TiO2 thin film
  Journal of the Korean Physical Society, 2017
• A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors
  Scientific Reports, 2017
• A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum
  Transactions on Electrical and Electronic Materials, 2017
• Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor
  Materials Research Bulletin, 2016
• Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, SnO2 and ZTO
  Korean Journal of Materials Research, 2015
• Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
  Applied Physics Letters, 2013
• Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
  Solid-State Electronics, 2010
• Comparison between SiOC Thin Film by plasma enhance chemical vapor deposition and SiO2 Thin Film by Fourier Transform Infrared Spectroscopy
  Journal of the Korean Physical Society, 2010
• Schottky barrier MOSFET structure with silicide source/drain on buried metal
  Chinese Physics, 2006
• Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling
  Journal of Applied Physics, 1982