Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch−2 density

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Abstract
Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications1,2,3,4,5. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices6,7,8,9. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch−2. The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 °C, which results in excellent ferroelectric properties.

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