Performance Enhancement of NiO x /β-Ga₂O₃ Heterojunction Diodes by Synergistic Interface Engineering

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Abstract
In this work, we report on achieving enhanced performance NiO $_{\textit{x}}$ /beta gallium oxide ( $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ ) heterojunction p-n diodes (HJDs) through synergistic interface engineering (SIE), which can greatly improve the electrical characteristics and interface characteristics of HJDs. It is shown that the NiO $_{\textit{x}}$ surface undergoes morphological improvement and hole concentration enhancement after the UV/ozone treatment (UVO). Owing to the improved interfacial properties of Ni/NiO $_{\textit{x}}$ , the forward conduction current of NiO $_{\textit{x}}$ / $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ HJD has significantly increased. Furthermore, the HJD performance can be improved by SIE with UVO and postannealing, especially for the reverse breakdown characteristics. Finally, a high-performance HJD without any terminal structure is obtained, which exhibits a low specific on-resistance of 2.47 m $\Omega \cdot$ cm $^{\text{2}}$ and a high breakdown voltage of 1355 V, yielding a high Baliga’s figure of merit (BFOM) of 0.743 GW/cm $^{\text{2}}$ , which is a 219.17% enhancement in performance compared to untreated device. This work offers a practical and effective strategy for developing advanced Ga $_{\text{2}}$ O $_{\text{3}}$ devices with exceptional performance metrics, paving the way for future technological breakthroughs.
Funding Information
  • National Key Research and Development Program of China (2022YFB3605402)
  • Fundamental Research Funds for the Central Universities (YJSJ24020)
  • National Natural Science Foundation of China (62274132, 62004151, 62274126)
  • Natural Science Basic Research Program of Shaanxi (2021JC-24)

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