Anomalous low-frequency grain-boundary capacitance in silicon
Authors:
- 15 October 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (8) , 747-749
Abstract
The admittance of silicon bicrystals has been measured as a function of temperature, frequency, and dc voltage. In some cases the low-frequency capacitance is anomalously large. The ac response of a simple double depletion layer structure is calculated. The anomalous capacitive currents are due to an out-of-phase modulation of the barrier height caused by charge injected into grain-boundary traps.Keywords
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