Progress in Large Integration Scale Circuits in SiON Technology
- 1 July 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (21627339) , 223-226
Abstract
In this contribution the potentialities and the limitation of the silicon oxynitride (SiON) technology are reviewed and a number of integrated optical circuits and devices are presented. Mach-Zehnder, ring resonators, variable bandwidth filters, ring resonators based cross-bar matrices and a DQPSK receiver with interleaver and variable attenuators have been realized, characterized and tested in a 10 Gbit/s WDM system.Keywords
This publication has 4 references indexed in Scilit:
- Microphotonics devices based on silicon microfabrication technologyIEEE Journal of Selected Topics in Quantum Electronics, 2005
- Ring-resonator filters in silicon oxynitride technology for dense wavelength-division multiplexing systemsOptics Letters, 2003
- Design, tolerance analysis, and fabrication of silicon oxynitride based planar optical waveguides for communication devicesJournal of Lightwave Technology, 1999
- Design and fabrication of monolithic optical spot size transformers (MOSTs) for highly efficient fiber-chip couplingJournal of Lightwave Technology, 1994