X–ray absorption fine structure (XAFS) of Si wafer measured using total reflection X–rays
Authors:
- Jun KawaiJKJun Kawai
- Shinjiro HayakawaSHShinjiro Hayakawa
- 1 January 1999
- journal article
- Published by Elsevier in Spectrochimica Acta Part B: Atomic Spectroscopy
- Vol. 54 (1) , 215-222
Abstract
No abstract availableKeywords
This publication has 62 references indexed in Scilit:
- Inelastic Mean Free Path of Photoelectrons in Ag Determined by Total Reflection X-Ray Photoelectron SpectroscopyAnalytical Sciences, 1997
- Diffuse scattering from interface roughness in grazing-incidence x-ray diffractionPhysical Review B, 1996
- Surface Sensitive X-ray Absorption Fine Structure Measurement Using Sample Current Induced by Totally Reflected X-rays.Proceedings of the Japan Academy, Series B, 1993
- NEXAFS Spectroscopy1992
- Flourescence detection of surface exafsPhysics Letters A, 1984
- Extended x-ray absorption fine structure—its strengths and limitations as a structural toolReviews of Modern Physics, 1981
- The extended X-ray absorption fine structure in the reflectivity at the K edge of CuJournal of Physics C: Solid State Physics, 1981
- EXAFS and surface EXAFS from measurements of X-ray reflectivityJournal of Physics C: Solid State Physics, 1980
- EXAFS studies on superficial regions by means of total reflectionPhysica Status Solidi (a), 1980
- Carbon-edge fine structure in graphite foils and in thin-film contaminants on metal surfacesPhysical Review B, 1980