New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors
Authors:
- S.P. VoinigescuSVS.P. Voinigescu
- K. IniewskiKIK. Iniewski
- R. LisakRLR. Lisak
- C.A.T. SalamaCSC.A.T. Salama
- J.-P. NoélJNJ.-P. Noél
- D.C. HoughtonDHD.C. Houghton
- 1 August 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (8) , 1491-1501
Abstract
No abstract availableKeywords
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- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986