A high efficiency, high voltage, balanced cascode FET
Authors:
- 1 January 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- A high power density 26 V GaAs pHEMT technology2004
- A high gain L-band GaAs FET technology for 28V operation2004
- The high voltage/high power FET (HiVP)2003
- A 2.4-ghz 0.18-μm cmos self-biased cascode power amplifierIEEE Journal of Solid-State Circuits, 2003
- Class-E, Class-C, and Class-F power amplifiers based upon a finite number of harmonicsIEEE Transactions on Microwave Theory and Techniques, 2001