SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs
Authors:
- 1 September 2011
- journal article
- research article
- Published by World Scientific Pub Co Pte Ltd in International Journal of High Speed Electronics and Systems
- Vol. 20 (03) , 385-392
Abstract
This paper presents high performance device results using an ultra-thin AlN / GaN structure on sapphire substrate with a 100-nm T -gate. Excellent dc and RF characteristics are reported, including an extrinsic transconductance of 500 mS/mm and an extrinsic f t / f max ( U ) ratio of 78/111-GHz which is among the highest reported for AlN / GaN HFETs. Low gate leakage results are also presented despite the small barrier thickness and absence of a gate dielectric. Modeling of the small signal parameters is also discussed to gain an understanding of the limiting and contributing performance factors.Keywords
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