AI-driven model for optimized pulse programming of memristive devices
Open Access
- 7 April 2025
- journal article
- Published by AIP Publishing in APL Machine Learning
- Vol. 3 (2)
Abstract
Next-generation artificial intelligence (AI) hardware based on memristive devices offers a promising approach to reducing the increasingly large energy consumption of AI applications. However, programming memristive AI hardware to achieve a desired synaptic weight configuration remains challenging because it requires accurate and energy-efficient algorithms for selecting the optimal weight-update pulses. Here, we present a computationally efficient AI model for predicting the weight update of memristive devices and guiding device programming. The synaptic weight-update behavior of bilayer HfO2/TiO2 memristive devices is characterized over a range of pulse parameters to provide experimental data for the AI model. Three different artificial neural network (ANN) configurations are trained and evaluated regarding the amount of training data required for accurate predictions and the computational costs. Finally, we apply the model to an antipulse weight-update process to demonstrate its performance. The results show that accurate and computationally inexpensive predictions are possible with comparatively few datasets and small ANNs. The normalized weight-update processes are predicted with accuracies comparable with larger model architectures but require only 896 floating point operations and 8.33 nJ per inference. This makes the model a promising candidate for integration into AI-driven device controllers as a precise and energy-efficient solution for memristive device programming.Keywords
Funding Information
- Carl-Zeiss-Stiftung (Memwerk)
- Deutsche Forschungsgemeinschaft (434434223, 536099247, 422738993)
- Bundesministerium für Forschung, Technologie und Raumfahrt (16KISK026 (6G-RIC), 16KIS2067K (DI-SIGN-HEP))
This publication has 53 references indexed in Scilit:
- Experimental demonstration of SnO₂ nanofiber-based memristors and their data-driven modeling for nanoelectronic applicationsChip, 2023
- The Role of Vacancy Dynamics in Two‐Dimensional Memristive DevicesAdvanced Electronic Materials, 2023
- A novel programming circuit for memristorsMicroelectronic Engineering, 2023
- Tutorial on memristor-based computing for smart edge applicationsMemories - Materials, Devices, Circuits and Systems, 2023
- High Performance Computing2023
- Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memoryChaos, Solitons & Fractals, 2021
- Emerging Memristive Artificial Synapses and Neurons for Energy‐Efficient Neuromorphic ComputingAdvanced Materials, 2020
- Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodesSN Applied Sciences, 2019
- Temperature dependent analytical modeling and simulations of nanoscale memristorEngineering Science and Technology, an International Journal, 2018
- Resistive Switching Memory: Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process (Adv. Electron. Mater. 1/2016)Advanced Electronic Materials, 2016