Temperature distribution in an inductively heated CZ crucible
Authors:
- Dong-Xing DuDDDong-Xing Du
- Tetsuo MunakataTMTetsuo Munakata
- 1 October 2005
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 283 (3-4) , 563-575
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effect of RF coil position on spoke pattern on oxide melt surface in Czochralski crystal growthJournal of Crystal Growth, 2003
- A continuous Czochralski silicon crystal growth systemJournal of Crystal Growth, 2003
- Global simulation of a silicon Czochralski furnace in an axial magnetic fieldInternational Journal of Heat and Mass Transfer, 2003
- Coupling of conductive, convective and radiative heat transfer in Czochralski crystal growth processComputational Materials Science, 2002
- Global simulation of a silicon Czochralski furnaceJournal of Crystal Growth, 2002
- Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide CrystalsJournal of Heat Transfer, 2001
- Study on silicon melt convection during the RF-FZ crystal growth processJournal of Crystal Growth, 1999
- Transport Phenomena in Czochralski Crystal Growth Processes1997
- An integrated process model for the growth of oxide crystals by the Czochralski methodJournal of Crystal Growth, 1989
- A finite element model for induction heating of a metal crucibleJournal of Crystal Growth, 1987