A 77 GHz CMOS power amplifier module using multi-layered redistribution layer technology
Authors:
- 1 November 2013
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 23735449,p. 1-4
Abstract
This paper presents a new millimeter-wave module concept, which is an integration of CMOS monolithic microwave integrated circuits (MMICs) and passive devices fabricated using a redistribution layer (RDL) technology. To realize a low-loss passive circuit, we introduced a multi-metal-layer for the RDL. The first metal layer was used as ground to shield from substrates. The upper metal layers form passive RF components such as a thin film microstrip line (TFMSL), a spiral inductor, a balun, a power combiner, and an antenna. Detailed measurements and characterizations are presented, and we show their applicability in the millimeter-wave region. Moreover, this concept was applied to an integrating millimeter-wave module consisting of four identical CMOS power amplifiers and RDL power combiners to increase the output power. The module exhibited a saturation power of 15 dBm, which is almost four-times higher than that obtained from the single PA. The measured small-signal gain of the PA module was 5.4 dB. The total chip size was 2.2 × 1.5 mm 2 . The power consumption of the PA module was 800 mW.Keywords
This publication has 8 references indexed in Scilit:
- A 65 nm CMOS 4-Element Sub-34 mW/Element 60 GHz Phased-Array TransceiverIEEE Journal of Solid-State Circuits, 2011
- A Compact W-Band CMOS Power Amplifier With Gain Boosting and Short-Circuited Stub Matching for High Power and High Efficiency OperationIEEE Microwave and Wireless Components Letters, 2011
- A fully integrated 77GHz FMCW radar system in 65nm CMOS2010
- A 24 GHz 90-nm CMOS-based power amplifier module with output power of 20 dBm2009
- A 68–83 GHz power amplifier in 90 nm CMOS2009
- A 77GHz transceiver in 90nm CMOS2009
- A 77 GHz SiGe mixer in an embedded wafer level BGA package2008
- S-parameter-based IC interconnect transmission line characterizationIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1992