Controllable Phase Transition of Two-Dimensional In2Se3 from Interfacial Oxide Layers: Implications for High-Power Electronic Devices
- 30 October 2023
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Nano Materials
- Vol. 6 (21) , 19867-19875
Abstract
No abstract availableKeywords
Funding Information
- Scientific and Innovative Action Plan of Shanghai (2021-cyxt1-kj03, 20501130200, 20YF1456400)
- Youth Innovation Promotion Association of the Chinese Academy of Sciences (2017281)
- National Natural Science Foundation of China (12104476, 62174169)
- Key Project of Frontier Science Research of Chinese Academy of Sciences (XDB30000000)
This publication has 54 references indexed in Scilit:
- Wafer-Scale Synthesis of Semiconducting SnO Monolayers from Interfacial Oxide Layers of Metallic Liquid TinACS Nano, 2017
- Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline FilmAdvanced Materials, 2017
- Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materialsNature Communications, 2017
- Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metalsNature Communications, 2017
- High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSeNature Nanotechnology, 2016
- Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band GapNano Letters, 2016
- Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor DepositionNano Letters, 2015
- Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphereNature Communications, 2015
- Extraordinary Photoresponse in Two-Dimensional In2Se3 NanosheetsACS Nano, 2013
- Van der Waals Picture of Liquids, Solids, and Phase TransformationsScience, 1983