Experimental evidence of short-channel electron mobility degradation caused by interface charges located at the gate-edge of triple-gate FinFETs
Authors:
- J. RamosJRJ. Ramos
- E. AugendreEAE. Augendre
- A. KottantharayilAKA. Kottantharayil
- A. MerchaAMA. Mercha
- E. SimoenESE. Simoen
- M. RosmeulenMRM. Rosmeulen
- S. SeveriSSS. Severi
- C. KernerCKC. Kerner
- T. ChiarellaTCT. Chiarella
- A. NackaertsANA. Nackaerts
- I. FerainIFI. Ferain
- T. HoffmannTHT. Hoffmann
- 1 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 72-74
Abstract
The mechanism responsible for the short-channel electron mobility (e$mobility) abnormal degradation in n-type tall fins multiple-gate field-effect transistors (MuGFETs) has been identified. RF-CV measurement, mobility extraction, and 1/f noise measurements have been performed and point to a larger process related density of traps (N t) at the gate edges. These traps and their distribution along the channel give a common and consistent explanation for the channel dependence of the mobility and the normalized noise degradation and for the threshold voltage roll offKeywords
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