Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals
Authors:
- 29 March 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (13) , 1866-1868
Abstract
The activation energy for nickel-induced lateral crystallization of amorphous silicon heated in an inert atmosphere was investigated, and was found to be 1.75 eV for rapid thermal annealing and 1.86 eV for furnace annealing. Polycrystalline silicon thin-film transistors fabricated in furnace recrystallized and rapid thermal recrystallized material had similar device characteristics, even though the crystallization velocity differed by a factor of 3.Keywords
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