Mechanism of Self-catalytic Atomic Layer Deposition of Silicon Dioxide Using 3-Aminopropyl Triethoxysilane, Water, and Ozone
Authors:
- 15 April 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 23 (9) , 2312-2316
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonatorsJournal of Applied Physics, 2010
- Comparative Study of Titanium Dioxide Atomic Layer Deposition on Silicon Dioxide and Hydrogen-Terminated SiliconThe Journal of Physical Chemistry C, 2010
- Digital Control of SiO2−TiO2 Mixed-Metal Oxides by Pulsed PECVDACS Applied Materials & Interfaces, 2009
- Investigation of various surface passivation schemes for silicon solar cellsSolar Energy Materials and Solar Cells, 2006
- High dielectric constant gate oxides for metal oxide Si transistorsReports on Progress in Physics, 2005
- In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer depositionApplied Physics Letters, 2005
- Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water processJournal of Applied Physics, 2005
- Nanolaminates of Zirconia and Silica Using Atomic Layer DepositionChemistry of Materials, 2004
- Atomic Layer Deposition of SiO2 Films on BN Particles Using Sequential Surface ReactionsChemistry of Materials, 2000
- Surface Chemistry for Atomic Layer GrowthThe Journal of Physical Chemistry, 1996