Electron/hole energy shifts in narrow GaAs/AlAs quantum wells: Inhomogeneous broadening due to half-monolayer well-width fluctuations

This publication has 13 references indexed in Scilit:

• Order of theXconduction-band valleys in type-II GaAs/AlAs quantum wells
  Physical Review B, 1989
• Optical properties and band structure of short-period GaAs/AlAs superlattices
  Journal of Luminescence, 1987
• Effects of the layer thickness on the electronic character in GaAs-AlAs superlattices
  Applied Physics Letters, 1987
• Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlattices
  Journal of Applied Physics, 1986
• A critical review of heterojunction band offsets
  Journal of Vacuum Science & Technology B, 1985
• X-ray rocking curve analysis of superlattices
  Journal of Applied Physics, 1984
• Energy-gap discontinuities and effective masses for $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ quantum wells
  Physical Review B, 1984
• Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
  IEEE Journal of Quantum Electronics, 1984
• Observation of the excited level of excitons in GaAs quantum wells
  Physical Review B, 1981
• Optical characterization of interface disorder in multi-quantum well structures
  Solid State Communications, 1981