Electrical and Structural Properties of Amorphous In-Se Films Prepared by Flash Evaporation

Authors:
  • IWIchiro Watanabe
    Ichiro Watanabe
  • TYTeiji Yamamoto
    Teiji Yamamoto
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Abstract
Electrical conduction in amorphous In x Se100-x films is actually n-type, although some workers have considered it to be p-type, since p-type conduction is observed in the partially-crystallized films. A fairly large upward-Fermi-level-shift appears, in particular, in films with composition near x=40. Raman measurements show that In and Se are incorporated in the network in such a way that their surroundings are the same as those in α-In2Se3 crystal in the composition range x= 0 ∼28, in γ-In2Se3 crystal at x=40 and in InSe crystal at x=50. The coordination number of In is likely to be four except at the composition near x=40, where five-fold coordinated In also exists, while the coordination number of Se is mainly three.

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