Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
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Open Access
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 9 (6) , G191-G194
Abstract
We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, (pentakis(dimethylamino)Ta, PDMAT) and [tetrakis(dimethylamido)Ti, TDMAT]. ALD of by PDMAT with water or oxygen plasma produced pure films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of .Keywords
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