Contribution of electronic structure to thermoelectric power in ${(\mathrm{Bi},\mathrm{Pb})}_2{(\mathrm{Sr},\mathrm{La})}_2\mathrm{Cu}{\mathrm{O}}_{6+\delta }$

The energy-momentum $(\epsilon -\mathbf{k})$ dispersion and the shape of the Fermi surface in the ${(\mathrm{Bi},\mathrm{Pb})}_2{(\mathrm{Sr},\mathrm{La})}_2\mathrm{Cu}{\mathrm{O}}_{6+\delta }$ (Bi2201) superconductors with various hole concentrations were determined by the high resolution angle-resolved photoemission spectroscopy. On the basis of the $\epsilon -\mathbf{k}$ dispersion thus obtained, temperature and hole-concentration dependence of the thermoelectric power $S\left(T\right)$ was calculated within the framework of the Boltzmann transport theory. $S\left(T\right)$ of the optimally and overdoped samples was quantitatively reproduced by the present calculation, strongly indicating that characteristics in $S\left(T\right)$ of the high-$T_c$ cuprates under the optimally to overdoped conditions is unambiguously caused by the band structure characterized by the van Hove singularity near the Fermi level.