Charge storage characteristics of atomic layer deposited RuOx nanocrystals

Authors:

The charge storage characteristics of atomic layer deposited

Ru O_{x}

nanocrystals embedded in high-

k

Hf O_{2} ∕ {Al}_{2} O_{3}

films in a metal/

{Al}_{2} O_{3} ∕ Ru O_{x} ∕ Hf O_{2} ∕ Si O_{2} ∕ n - Si

structure have been investigated. The size and density of

Ru O_{x}

nanocrystals have been measured using transmission electron microscopy. The

Ru O_{x}

nanocrystals show a density of

\sim 1 \times 10^{12} ∕ {cm}^{2}

and a diameter of

5 - 8 nm

. A large hysteresis memory window of

\sim 13.3 V

at a gate voltage of

9 V

has been observed for

Ru O_{x}

nanocrystal memory capacitors. A hysteresis memory window of

0.7 V

has also been observed under a small sweeping gate voltage of

1 V

. A promising memory window of

Ru O_{x}

nanocrystals has been observed as compared with those of pure

Hf O_{2}

and

{Al}_{2} O_{3}

charge trapping layers, due to charge storage in the

Ru O_{x}

metal nanocrystals. The

Ru O_{x}

nanocrystal memory capacitor has similar leakage current with the pure

Hf O_{2}

and

{Al}_{2} O_{3}

charge trapping layers. The

Ru O_{x}

memory capacitor has a large breakdown voltage of

\sim 13.8 V

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