Doping profiling with scanning surface harmonic microscopy
Authors:
- 4 February 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 27 (1-4) , 539-542
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Semiconductor characterization with the scanning surface harmonic microscopeApplied Physics Letters, 1994
- Ultra-shallow-doped film requirements for future technologiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
- Scanning surface harmonic microscopy: Scanning probe microscopy based on microwave field-induced harmonic generationReview of Scientific Instruments, 1992
- Scanning tunneling microscopy and spectroscopy for studying cross-sectioned Si(100)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992
- Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopyApplied Physics Letters, 1991
- Semiconductor characterization by scanning force microscope surface photovoltage microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1991
- Dopant migration in silicon during implantation/annealing measured by scanning tunneling microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1991
- Scanning tunneling microscopy of silicon surfaces in air: Observation of atomic imagesJournal of Vacuum Science & Technology A, 1990
- Silicon surface passivation by hydrogen termination: A comparative study of preparation methodsJournal of Applied Physics, 1989
- Nonlinear alternating-current tunneling microscopyPhysical Review Letters, 1989