Author(s): Daniel Walkup. When a gate-tunable two-dimensional electron system (2DES) lies atop a flake of hexagonal boron nitride (hBN), charged defects in the hBN can modify the gating locally, creating a potential landscape for the 2DES’s mobile electrons. By pulsing the voltage of a scanning tunneling microscope (STM) tip we create controlled, semi-permanent pockets of these