Structural stability and selectivity of thin epitaxial semiconductors
Authors:
- 29 September 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13) , 782-784
Abstract
It is shown how the availability of structural degrees of freedom in various ternary AnB4−nC4 adamantine semiconductors can lead to their energetic stabilization when grown epitaxially, and how the substrate strain can preferentially stabilize one structure over another even when the two are equally stable (or unstable) in bulk form.Keywords
This publication has 13 references indexed in Scilit:
- Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxyApplied Physics Letters, 1986
- Stability of Ordered Bulk and Epitaxial Semiconductor AlloysPhysical Review Letters, 1986
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985
- Raman and photoluminescence spectra of GaAs1−xSbxJournal of Applied Physics, 1985
- Atomic structure and ordering in semiconductor alloysPhysical Review B, 1985
- Bond lengths around isovalent impurities and in semiconductor solid solutionsPhysical Review B, 1984
- Theory of the band-gap anomaly inchalcopyrite semiconductorsPhysical Review B, 1984
- Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate LayerJournal of the Electrochemical Society, 1980
- On the energy gap of cubic CdSPhysics Letters A, 1967
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966