Donor-acceptor pairs in GaP and GaAs involving the deep nickel acceptor
Authors:
- 1 March 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (5) , 355-357
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Intra d-shell excitations of cobalt and nickel acceptors in gallium arsenideSolid State Communications, 1980
- Photoluminescence excitation spectroscopy of 3d transition-metal ions in GaP and ZnSeJournal of Physics C: Solid State Physics, 1980
- Photoluminescence studies of deep traps in GaP:NiJournal of Physics C: Solid State Physics, 1979
- Optical and EPR study of the nickel two-electron-trap state in GaPPhysical Review B, 1979
- Deep level profiles at substrate-epitaxial interfaces in gallium phosphideSolid-State Electronics, 1978
- Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphideJournal of Physics D: Applied Physics, 1977
- ESR of a Mn-S nearest neighbour complex in GaPSolid State Communications, 1972
- Photoluminescence of Donor Doped GaAs Diffused with CopperJapanese Journal of Applied Physics, 1971
- Optical Properties of Cd-O and Zn-O Complexes in GaPPhysical Review B, 1968
- New Red Pair Luminescence from GaPPhysical Review B, 1968