The diffusion of boron in the SiSiO2 system
Author:
- P.R. WilsonPWP.R. Wilson
- 1 September 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (9) , 961-970
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Glass Source Diffusion in Si and SiO[sub 2]Journal of the Electrochemical Society, 1971
- On the Redistribution of Boron in the Diffused Layer during Thermal OxidationJournal of the Electrochemical Society, 1970
- Thermal Expansion of Sputtered Silicon Nitride FilmsJournal of the Electrochemical Society, 1969
- Impurity Redistribution in a Semiconductor during Thermal OxidationJournal of the Electrochemical Society, 1967
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Diffusion of Boron in Silicon through Oxide LayerJapanese Journal of Applied Physics, 1962
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962
- Diffusion of Boron into SiliconJournal of Applied Physics, 1960
- Diffusion of phosphorus in silicon oxide filmJournal of Physics and Chemistry of Solids, 1959