First power demonstration of InP/GaAsSb/InP double HBTS
Authors:
- D. PavlidisDPD. Pavlidis
- Guangyuan ZhaoGZGuangyuan Zhao
- Byung-Kwon HanBHByung-Kwon Han
- A. WibowoAWA. Wibowo
- Noren PanNPNoren Pan
- 13 July 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10928669,p. 757-760
Abstract
The microwave power performance of InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) was evaluated and is reported for the first time. Fabricated DHBTs showed DC gain of 15-35, small turn-on voltages of 0.44 V at 1 kA/cm/sup 2/ , almost zero offset voltage, and emitter-collector breakdown voltage BV/sub CEO/ /spl ges/ 6 V. Devices with 3/spl times/5 /spl mu/m/sup 2/ emitters showed maximum f/sub T/ of 75 GHz and maximum f/sub max/ of 34 GHz when biased at J/sub C/ =1.7/spl times/10/sup 5/ A/cm/sup 2/ and V/sub CE/ =2.0 V. Devices with 5/spl times/10 /spl mu/m/sup 2/ emitters demonstrated power gain of 10 dB with 1 dB-compressed output power of 18 dBm at 5 GHz. High power density of 1.6 mW//spl mu/m/sup 2/ and associated efficiency of 33% were obtained using these devices.Keywords
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