Effect of one monolayer of surface gold atoms on the epitaxial growth of InAs nanowhiskers
Authors:
- 26 October 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (17) , 2051-2053
Abstract
This letter shows that selective heteroepitaxy of nanometer‐scale InAs whiskers on SiO2‐patterned GaAs substrates [Yazawa, Koguchi, and Hiruma, Appl. Phys. Lett. 58, 1080 (1991)] is induced by surface contamination with Au resulting from the fluorocarbon plasma etching process used to etch the SiO2 mask. We demonstrate that high densities (≂1010/cm2) of InAs nanowhiskers 20–30 nm in diameter can be epitaxially grown on InAs(111)B substrates onto which 1 monolayer of Au atoms had been deposited. This wirelike growth appears to be induced by ultrafine alloy droplets generated by the reactions between Au‐clusters and InAs substrates.Keywords
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