Spin Orbit Torque Non-Volatile Flip-Flop for High Speed and Low Energy Applications
Authors:
- 16 January 2014
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 35 (3) , 408-410
Abstract
A novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered. In addition to the independence between writing and reading paths, which offers a high reliability, the low resistive writing path performs high-speed, and energy-efficient WRITE operation. We compare the SOT-MTJ performances metrics with the spin transfer torque (STT)-MTJ. Based on accurate compact models, simulation results show an improvement, which attains 20× in terms of WRITE energy per bit cell. At the same writing current and supply voltage, the SOT-MTJ achieves a writing frequency 4× higher than the STT-MTJ.Keywords
This publication has 12 references indexed in Scilit:
- Compact model of a three-terminal MRAM device based on Spin Orbit Torque switching2013
- DSH-MRAM: Differential Spin Hall MRAM for On-Chip MemoriesIEEE Electron Device Letters, 2013
- Spin-Torque Switching with the Giant Spin Hall Effect of TantalumScience, 2012
- Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel JunctionsIEEE Transactions on Electron Devices, 2012
- Current-induced spin–orbit torquesPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2011
- Perpendicular switching of a single ferromagnetic layer induced by in-plane current injectionNature, 2011
- Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCsIEEE Journal of Solid-State Circuits, 2009
- Tunneling between ferromagnetic filmsPhysics Letters A, 1975
- Tunneling Conductance of Asymmetrical BarriersJournal of Applied Physics, 1970
- Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963