Si-doped AlxGa1-xN photoconductive detectors
- 1 January 1999
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 14 (8) , 685-689
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- High-quality visible-blind AlGaN p-i-n photodiodesApplied Physics Letters, 1999
- High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaNApplied Physics Letters, 1999
- Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivityApplied Physics Letters, 1998
- High-performance GaN p-n junction photodetectors for solar ultraviolet applicationsSemiconductor Science and Technology, 1998
- Visible blind GaN p-i-n photodiodesApplied Physics Letters, 1998
- Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaNJournal of Applied Physics, 1998
- Schottky barrier photodetectors based on AlGaNApplied Physics Letters, 1998
- Al x Ga 1−x N (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor depositionApplied Physics Letters, 1997
- High responsitivity intrinsic photoconductors based on AlxGa1−xNApplied Physics Letters, 1996
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996