A robust and energy-efficient near-threshold SRAM cell utilizing ballistic carbon nanotube wrap-gate transistors
Authors:
- Mohammad Khaleqi Qaleh JooqMJMohammad Khaleqi Qaleh Jooq
- Ali MirAMAli Mir
- Sattar MirzakuchakiSMSattar Mirzakuchaki
- Ali FarmaniAFAli Farmani
- 1 October 2019
- journal article
- research article
- Published by Elsevier in AEU - International Journal of Electronics and Communications
- Vol. 110
Abstract
No abstract availableKeywords
This publication has 58 references indexed in Scilit:
- Carbon Nanotubes: Present and Future Commercial ApplicationsScience, 2013
- High on/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperaturesApplied Physics A, 2013
- Ultra low power dual-gate 6T and 8T stack forced CNFET SRAM cellsMicroelectronics Journal, 2013
- Dependence of carbon nanotube field effect transistors performance on doping level of channel at different diameters: On/off current ratioApplied Physics Letters, 2011
- Design of a ternary static memory cell using carbon nanotube-based transistorsMicro & Nano Letters, 2011
- The era of carbon allotropesNature Materials, 2010
- The end of CMOS scalingIEEE Circuits and Devices Magazine, 2005
- Extraordinary Mobility in Semiconducting Carbon NanotubesNano Letters, 2003
- Theory of ballistic nanotransistorsIEEE Transactions on Electron Devices, 2003
- High-Mobility Nanotube Transistor MemoryNano Letters, 2002