Atomic simulation of the mechanism for GaN removal by coupling texture depth and grinding depth under water lubrication conditions
Authors:
- Houfu DaiHDHoufu Dai
- Zhihao ShangZSZhihao Shang
- Yanguang ZhouYZYanguang Zhou
- Ze LiuZLZe Liu
- Bouachanh SihavongBSBouachanh Sihavong
- Vannaphone PutthanaVPVannaphone Putthana
- Hao DuHDHao Du
- 16 March 2026
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 209
Abstract
No abstract availableFunding Information
- Shantou University (NTF23015)
- National Natural Science Foundation of China (12162008)
- Natural Science Foundation of Guangdong Province (2025A1515011447)
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