Atomic-layer deposited IrO₂nanodots for charge-trap flash-memory devices

This publication has 16 references indexed in Scilit:

• Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing
  Applied Physics Letters, 2006
• Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices
  Applied Physics Letters, 2005
• Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory
  Applied Physics Letters, 2005
• Study on SONOS Nonvolatile Memory Technology Using High-Density Plasma CVD Silicon Nitride
  Electrochemical and Solid-State Letters, 2004
• Hybrid silicon nanocrystal silicon nitride dynamic random access memory
  IEEE Transactions on Nanotechnology, 2003
• Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer
  Journal of Applied Physics, 2003
• Silicon-nitride as a tunnel dielectric for improved SONOS-type flash memory
  IEEE Electron Device Letters, 2003
• Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells
  2003
• Layered tunnel barriers for nonvolatile memory devices
  Applied Physics Letters, 1998
• A silicon nanocrystals based memory
  Applied Physics Letters, 1996