High-density InAs nanowires realized in situ on (100) InP
Authors:
- 23 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (8) , 1173-1175
Abstract
High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5×10 nm2. The linear density is as high as 70 wires/μm. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements.Keywords
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