A Submilliwatt K-Band Low-Noise Amplifier for Next Generation Radio Astronomical Receivers in 65-nm CMOS Process
- 21 May 2020
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 30 (7) , 669-672
Abstract
An ultralow-power K-band low-noise amplifier (LNA) for next generation radio astronomical receivers fabricated in 65-nm CMOS technology is presented in this letter. A gate-source transformer feedback is utilized for the simultaneous noise and impedance matching. In order to achieve high gain with limited dc power consumption (Pdc), a single-ended neutralization technique is applied to the circuit. According to measurement, the proposed K-band LNA achieves a 19.1-dB small signal gain with 2.8-GHz 3-dB bandwidth (21.2-24 GHz) and noise figure of 3.6 dB with only 0.99 mW Pdc. To the best of author's knowledge, this LNA shows the highest figure of merit (FoM), which is 7071 1/W, among published K-band low-power LNAs.Keywords
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