The characteristic carrier–Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering
Authors:
- 16 June 2003
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (25) , 4489-4491
Abstract
The characteristic interaction distance between ions and carriers that excite them in Er-doped superlattices is investigated. Superlattice thin films consisting of 12 periods of layers were deposited by ion sputtering and subsequent annealing at 950 °C. The dependence of the photoluminescence intensity on the thickness of the Er-doped layers is well-described by an exponentially decreasing Er-carrier interaction with a characteristic interaction distance of
Keywords
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