Combined HW/SW Drift and Variability Mitigation for PCM-Based Analog In-Memory Computing for Neural Network Applications
Authors:
- Alessio AntoliniAlessio Antolini
- Carmine PaolinoCPCarmine Paolino
- Francesco ZavalloniFZFrancesco Zavalloni
- Eleonora Franchi ScarselliESEleonora Franchi Scarselli
- Mauro MangiaMMMauro Mangia
- Fabio PareschiFabio Pareschi
- Gianluca SettiGSGianluca Setti
- Riccardo RovattiRRRiccardo Rovatti
- Marcella CarissimiMCMarcella Carissimi
- Marco PasottiMPMarco Pasotti
Open Access
- 2 February 2023
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Vol. 13 (1) , 395-407
Abstract
Matrix-Vector Multiplications (MVMs) represent a heavy workload for both training and inference in Deep Neural Networks (DNNs) applications. Analog In-memory Computing (AIMC) systems based on Phase Change Memory (PCM) has been shown to be a valid competitor to enhance the energy efficiency of DNN accelerators. Although DNNs are quite resilient to computation inaccuracies, PCM non-idealities could strongly affect MVM operations precision, and thus the accuracy of DNNs. In this paper, a combined hardware and software solution to mitigate the impact of PCM non-idealities is presented. The drift of PCM cells conductance is compensated at the circuit level through the introduction of a conductance ratio at the core of the MVM computation. A model of the behaviour of PCM cells is employed to develop a device-aware training for DNNs and the accuracy is estimated in a CIFAR-10 classification task. This work is supported by a PCM-based AIMC prototype, designed in a 90-nm STMicroelectronics technology, and conceived to perform Multiply-and-Accumulate (MAC) computations, which are the kernel of MVMs. Results show that the MAC computation accuracy is around 95% even under the effect of cells drift. The use of a device-aware DNN training makes the networks less sensitive to weight variability, with a 15% increase in classification accuracy over a conventionally-trained Lenet-5 DNN, and a 36% gain when drift compensation is applied.Keywords
Funding Information
- Electronics Components and Systems for European Leadership (ECSEL) Joint Undertaking (101007321)
- JU through the European Union’s Horizon 2020 Research and Innovation Programme and France, Belgium, Czech Republic, Germany, Italy, Sweden, Switzerland, and Turkey
This publication has 44 references indexed in Scilit:
- Mixed-precision in-memory computingNature Electronics, 2018
- High-Performance Mixed-Signal Neurocomputing With Nanoscale Floating-Gate Memory Cell ArraysIEEE Transactions on Neural Networks and Learning Systems, 2017
- Recent Progress in Phase-ChangeMemory TechnologyIEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016
- Multilevel-Cell Phase-Change Memory: A Viable TechnologyIEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016
- Physical origin of the resistance drift exponent in amorphous phase change materialsApplied Physics Letters, 2011
- Programming algorithms for multilevel phase-change memory2011
- Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory2007
- Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change MemoriesIEEE Transactions on Electron Devices, 2007
- Gradient-based learning applied to document recognitionProceedings of the IEEE, 1998
- Learning representations by back-propagating errorsNature, 1986