Phosphorus redistribution during nickel silicide formation
Author:
- 15 July 1988
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (2) , 938-940
Abstract
Nickel silicide was formed by heat treating Ni film on a single-crystal Si(100) substrate. The Schottky barrier height of Ni silicide was examined in relation to the phosphorus dose implanted into the Si substrate. The reduction of the Schottky barrier height during the Ni silicide formation indicates phosphorus redistribution.Keywords
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