Low-temperature grown wurtzite In x Ga 1−x N thin films via hollow cathode plasma-assisted atomic layer deposition
- 21 August 2015
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 3 (37) , 9620-9630
Abstract
Hollow cathode plasma assisted atomic layer deposited In x Ga 1−x N alloys show successful tunability of the optical band gap by changing the In concentration in a wide range.Keywords
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