Formation of electron internal transport barrier and achievement of high ion temperature in Large Helical Device

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Abstract
An internal transport barrier (ITB) was observed in the electron temperature profile in the Large Helical Device [O. Motojima et al., Phys. Plasmas 6, 1843 (1999)] with a centrally focused intense electron cyclotron resonance microwave heating. Inside the ITB the core electron transport was improved, and a high electron temperature, exceeding 10 keV in a low density, was achieved in a collisionless regime. The formation of the electron-ITB is correlated with the neoclassical electron root with a strong radial electric field determined by the neoclassical ambipolar flux. The direction of the tangentially injected beam-driven current has an influence on the electron-ITB formation. For the counter-injected target plasma, a steeper temperature gradient, than that for the co-injected one, was observed. As for the ion temperature, high-power NBI (neutral beam injection) heating of 9 MW has realized a central ion temperature of 5 keV with neon injection. By introducing neon gas, the NBI absorption power was increased in low-density plasmas and the direct ion heating power was much enhanced with a reduced number of ions, compared with hydrogen plasmas.

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