Interfaces in semiconductor/metal radial superlattices

Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained $\mathrm{In}\mathrm{Ga}\mathrm{As}∕\mathrm{Ti}∕\mathrm{Au}$ as well as $\mathrm{In}\mathrm{Al}\mathrm{Ga}\mathrm{As}∕\mathrm{Ga}\mathrm{As}∕\mathrm{Cr}$ films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques. Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. The study reveals amorphous, noncrystalline layers for the semiconductor/metal as well as for the metal/semiconductor interface. The chemical analysis suggests that the observed interlayers are oxides giving rise to a semiconductor/oxide/metal/oxide superlattice rather than a pure semiconductor/metal superlattice.