Secondary Electron Emission from Hydrogen-Implanted Graphite with Real Depth Profile of Hydrogen
Authors:
- 1 June 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (6R) , 2856
Abstract
An experimental hydrogen depth profile is applied to a Monte Carlo simulation of secondary electron emission from hydrogen-implanted graphite. Due to hydrogen implantation, the secondary electron yield increases but the electron backscattering coefficient does not clearly change. Through thermal annealing of the specimen at a temperature higher than 600°C, the secondary electron yield returns to that of a clean graphite without implantation.Keywords
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