ESD Reliability of AlGaN/GaN HEMT Technology
Authors:
- 22 July 2019
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 66 (9) , 3756-3763
Abstract
This experimental study reports new aspects of electrostatic discharge (ESD) behavior in AlGaN/GaN HEMTs. The role of Schottky gate and MESA is investigated using special test structures. Influence of piezoelectric field, carrier trapping, and self-heating on ESD behavior is studied. A unique power-law-like behavior is found. Linear scaling of failure current with source–drain spacing is reported. Spot measured drain-to-source DC current is realized as an important parameter to monitor degradation. Unique degradation trends are observed for the first time and a correlation between snapback depth and % degradation is established. Cumulative nature of device degradation is discovered. Change from soft to hard failure with an increase in pulsewidth (PW) is reported. Finally, the cause of snapback instability observed in device, at low PW, is discussed.Keywords
Funding Information
- Department of Science and Technology, Ministry of Science and Technology (DST/TSG/AMT/2015/294)
This publication has 18 references indexed in Scilit:
- Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTsIEEE Transactions on Electron Devices, 2015
- Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2015
- Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface statesJournal of Applied Physics, 2015
- Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistorsJournal of Applied Physics, 2011
- Hot phonon effect on electron velocity saturation in GaN: A second lookApplied Physics Letters, 2007
- Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under biasApplied Physics Letters, 2006
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire SubstratesJapanese Journal of Applied Physics, 2004
- Electrical overstress in AlGaN/GaN HEMTs: study of degradation processesSolid-State Electronics, 2004
- Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistorsApplied Physics Letters, 2003
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001