A Ferroelectric Field Effect Device Using Thin Film SnO2and Gate Insulator BaTiO3
Authors:
- Kentaro ItoKIKentaro Ito
- Hidetoshi TsuchiyaHTHidetoshi Tsuchiya
- 1 July 1975
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 14 (7) , 1091-1092