Emission properties of high-Q silicon nitride photonic crystal heterostructure cavities

We report on the fabrication and optical characterization of photonic crystal (PC) double-heterostructure cavities made from silicon nitride (SiN). The intrinsic luminescence of the SiN membranes was used as an internal light source in the visible wavelength range $(600–700\mathrm{nm})$ to study the quality factor and polarization properties of the cavity modes. Quality factors of up to 3400 were found experimentally, which represents the highest value reported so far in low-index PCs. These results highlight the role of SiN as a promising material system for PC devices in the visible.