Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)
Authors:
- 1 April 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (4) , 663-671
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodesSolid State Communications, 1999
- Ballistic-Electron-Emission Microscopy on Epitaxial SilicidesJapanese Journal of Applied Physics, 1998
- On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodesJournal of Applied Physics, 1996
- Spatial variations of hot-carrier transmission across/Si interfaces on a nanometer scalePhysical Review B, 1996
- Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolutionPhysics Reports, 1995
- Fluctuations of the Au-Si(100) Schottky barrier heightPhysical Review Letters, 1993
- Electron transport at metal-semiconductor interfaces: General theoryPhysical Review B, 1992
- Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopyPhysical Review Letters, 1988
- On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriersSolid-State Electronics, 1986
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967