Electronic properties of shallow level defects in ZnO grown by pulsed laser deposition
Open Access
- 1 March 2008
- conference paper
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 100 (4) , 042038
Abstract
We have used deep level transient spectroscopy (DLTS) to characterise four defects with shallow levels in ZnO grown by pulsed laser deposition (PLD). These defects all have DLTS peaks below 100 K From DLTS measurements and Arrhenius plots we have calculated the energy levels of these defects as 31 meV, 64 meV, 100 meV and 140 meV, respectively, below the conduction band. The 100 meV defect displayed metastable behaviour: Annealing under reverse bias at temperatures of above 130 K introduced it while annealing under zero bias above 110 K removed it. The 64 meV and 140 meV defects exhibited a strong electric field assisted emission, indicating that they may be donors.Keywords
This publication has 8 references indexed in Scilit:
- Mean barrier height of Pd Schottky contacts on ZnO thin filmsApplied Physics Letters, 2006
- Electrical characterization of growth-induced defects in bulk-grown ZnOSuperlattices and Microstructures, 2006
- Bound exciton and donor–acceptor pair recombinations in ZnOPhysica Status Solidi (b), 2004
- The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnOJournal of Physics: Condensed Matter, 2001
- Recent advances in ZnO materials and devicesMaterials Science and Engineering: B, 2001
- ZnO diode fabricated by excimer-laser dopingApplied Physics Letters, 2000
- The Luminescence of ZnO under High One‐ and Two‐Quantum ExcitationPhysica Status Solidi (b), 1975
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938