Bias dependent inversion of tunneling magnetoresistance in Fe∕GaAs∕Fe tunnel junctions
Authors:
- 16 October 2006
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (16) , 162106
Abstract
The authors investigated spin dependent transport through tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an epitaxial interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at an interface and is relevant for spin injection experiments.
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This publication has 27 references indexed in Scilit:
- High-field magnetoresistance of Fe∕GaAs∕Fe tunnel junctionsJournal of Applied Physics, 2004
- Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrierApplied Physics Letters, 2003
- Spin polarized tunneling through single-crystal GaAs(001) barriersApplied Physics Letters, 2002
- Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductorApplied Physics Letters, 2002
- Conditions for efficient spin injection from a ferromagnetic metal into a semiconductorPhysical Review B, 2001
- Room-Temperature Spin Injection from Fe into GaAsPhysical Review Letters, 2001
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problemPhysical Review B, 2000
- Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductorPhysical Review B, 2000
- Complex Band Structure and Tunneling through FerromagnetInsulatorFerromagnet JunctionsPhysical Review Letters, 2000
- Tunneling between ferromagnetic filmsPhysics Letters A, 1975