A SEM-EBIC minority-carrier lifetime-measurement technique
Author:
- D E IoannouDID E Ioannou
- 14 April 1980
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 13 (4) , 611-616
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Diffusion length evaluation of boron-implanted silicon using the SEM-EBIC/Schottky diode techniqueJournal of Physics D: Applied Physics, 1979
- SEM observation of dislocations in boron implanted silicon using schottky barrier EBIC techniquePhysica Status Solidi (a), 1978
- Theory of lifetime measurements with the scanning electron microscope: Transient analysisSolid-State Electronics, 1976
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976